Light emitting element, plasma display panel, and CRT display device capable of considerably suppressing a high-frequency noise

ABSTRACT

In a display device ( 70, 70 A,  80 - 80 G,  90 - 90 F) having a display window ( 73, 81, 93 ), a magnetic loss layer or layer ( 75, 75 A,  88 - 88 C,  97 - 97 C) is formed on at least a part of a principal surface of the display window. The magnetic loss layer may be a granular magnetic thin layer which is, for example, made of a magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O. The magnetic loss layer may be formed in any one selected from mat, lattice, stripe, and speck fashions. The magnetic loss layer may be formed in a mesh fashion.

BACKGROUND OF THE INVENTION

[0001] This invention relates to a display device such as a lightemitting element having a light emitting window, a plasma display panel(PDP), and a cathode-ray tube (CRT) display device.

[0002] In recent years, highly integrated semiconductor devices operableat a high speed are remarkably wide spread and more and moreincreasingly used. As active devices using the semiconductor devices,there are known a random access memory (RAM), a read-only memory (ROM),a microprocessor (MPU), a central processing unit (CPU), and an imageprocessor arithmetic logic unit (IPALU), and so on. The above-mentionedactive devices are improved every minute so that an operation speedand/or a signal processing speed is rapidly increased. Under thecircumstances, an electric propagated at a high speed is accompaniedwith drastic changes in electric voltage or electric current. Suchchanges constitute a main factor in generation of a high-frequencynoise.

[0003] On the other hand, the reduction in weight, thickness, and sizeof electronic components or electronic apparatuses is endlessly making arapid progress. This results in a remarkable increase in degree ofintegration of the semiconductor devices and in density of mounting theelectronic components to a printed wiring board. In this event,electronic devices and signal lines densely integrated or mounted arevery close to one another. Such high-density arrangement, in combinationwith the increase in signal processing speed mentioned above, will causethe high-frequency noise to be readily induced.

[0004] Such a high-frequency noise may be, for example, emitted from alight emitting element such as a laser diode for use in an opticalpickup for an optical disk drive. This is because the laser diode may beoperable at a high speed and the laser diode, in this case, emits orradiates not only light (infrared rays) but also the high-frequencynoise.

[0005] However, in prior art, any measure is not taken for thehigh-frequency noise radiated from the above-mentioned light emissionelement.

[0006] On the other hand, as one of display devices, a plasma displaypanel (hereinafter which will be also referred to as “PDP”) is known. Inthe manner which will later be described in conjunction with FIG. 12, aconventional plasma display panel comprises first and second glasssubstrates which are opposed to each other with a gap left therebetween.The first glass substrate is disposed at the front while the secondglass substrate is disposed at the rear. Accordingly, the first glasssubstrate is called a front glass substrate while the second glasssubstrate is called a rear glass substrate. The front glass substrateand the rear glass substrate have first and second principal surfaces,respectively, at opposite sides. A plurality of front electrodes extendin a predetermined direction parallel to one another and are formed onthe first principal surface of the front glass substrate. Each frontelectrode is formed as a transparent electrode which is made of atransparent material such as SnO₂, ITO, or the like. The plurality offront electrodes are covered with a first dielectric layer. A pluralityof rear electrodes extend in a direction perpendicular to thepredetermined direction parallel to one another and formed on the secondprincipal surface of the rear glass substrate. Each rear electrode ismade, for example, of Ag. The plurality of rear electrodes are coveredwith a second dielectric layer. A plurality of barrier ribs are disposedbetween the first and the second dielectric layers.

[0007] Such a plasma display panel is called an opposite discharge-typeplasma display panel. The plasma display panel generates discharge raysbetween the front electrodes and the rear electrodes that are observedthrough the front electrodes acting as the transparent electrodes.Accordingly, the plasma display panel generates or radiateselectromagnetic waves from all over the panel surface of the plasmadisplay panel in accordance with the principle of its discharge. Thosegenerated electromagnetic waves serve as interference electromagneticwaves in other parts or other apparatuses. As a measure for suppressingthe interference electromagnetic waves, in the manner which will laterbe described in conjunction with FIG. 13, the front glass substrate isdivided into two sub-substrates in a thickness direction and aconductive mesh is disposed between the two sub-substrates.

[0008] However, the measure for suppressing the interferenceelectromagnetic waves with regard to the conventional plasma displaypanel becomes an issue as follows. At first, the conventional plasmadisplay panel is disadvantageous in that the number of parts isincreased and work hours required to assemble are also increased becausethe front substrate is divided into the two sub-substrates in theconventional plasma display panel. Secondly, the conductive meshdisposed within the front substrate results in degrading an opticalcharacteristic of the PDP. Thirdly, as regards absorption ofelectromagnetic waves in the conductive mesh, the conductive mesh has arestricted frequency band up to a frequency band of the order ofmegahertz (MHz) that is capable of absorbing the electromagnetic waves.That is, the conventional plasma display panel is disadvantageous inthat the conductive mesh cannot cope with absorption of theelectromagnetic waves up to a frequency band of the order of gigahertz(GHz) which becomes an issue in resent years.

[0009] As another one of the display devices, a cathode-ray tube(hereinafter which will be also referred to as “CRT”) display device isknown. In the manner known in the art, the cathode-ray tube displaydevice is used, for example, as a television (TV) picture tube of atelevision set, a monitor for a personal computer, or the like.Originally, a cathode-ray tube (CRT) is known as Braun tube or as anelectron-ray tube. In the manner which will later be described inconjunction with FIG. 22, a conventional CRT display device comprises acathode-ray tube or a glass vessel having an evacuated space inside anda deflecting yoke. The cathode-ray tube comprises a display panel havingan inner surface, fluorescent substances having a predetermined patternformed on the inner surface of the display panel, a shadow mask oppositeto the display panel with the fluorescent substances disposedtherebetween, and an electron gun. The electron gun radiates an electronbeam which passes through one of hollow holes of the shadow mask andhits on a position of the fluorescent substances to make the position ofthe fluorescent substances emit.

[0010] The conventional CRT display device generates or radiatesinterference electromagnetic waves when the electron beam hits on theposition of the fluorescent substances to make the position of thefluorescent substances emit. As a measure for suppressing theinterference electromagnetic waves in the conventional CRT displaydevice, in the manner which will later be described in conjunction withFIG. 23, a conductive mesh is embedded in the display panel in thecathode-ray tube.

[0011] However, the above-mentioned conventional CRT display deviceprovided with the conductive mesh is disadvantageous in that imagequality of the CRT display device is degraded because the conductivemesh interrupts emission in the fluorescent substances and theconductive mesh has a low absorption efficiency of the interferenceelectromagnetic waves if the conductive mesh has a low arrangementdensity in order to improve the image quality. The above-mentionedconventional CRT display device provided with the conductive mesh isalso disadvantageous in that a production cost thereof becomes high toembed the conductive mesh in the display panel. Furthermore, theconductive mesh has a frequency band enable to absorb theelectromagnetic waves that is restricted up to a frequency band of theorder of MHz. That is, the conventional CRT display device provided withthe conductive mesh is disadvantageous in that the conductive meshcannot cope with absorption of the electromagnetic waves up to afrequency band of the order of GHz which becomes an issue in resentyears.

SUMMARY OF THE INVENTION

[0012] It is therefore an object of this invention to provide a displaydevice which is capable of suppressing a high-frequency noise.

[0013] It is another object of this invention to provide a displaydevice of the type described, which is capable of achieving theabove-mentioned suppression effect with useless space.

[0014] It is an object of this invention to provide a plasma displaypanel which is capable of effectively absorbing interferenceelectromagnetic waves within a frequency band between MHz and GHz.

[0015] It is another object of this invention to provide a plasmadisplay panel of the type described, in which an emission characteristicof the plasma display panel is not disturbed.

[0016] It is still another object of this invention to provide a plasmadisplay panel of the type described, which has superior quantityproduction.

[0017] It is an object of this invention to provide a CRT display devicewhich is capable of effectively absorbing interference electromagneticwaves within a frequency band between MHz and GHz.

[0018] It is another object of this invention to provide a CRT displaydevice of the type described, in which an emission characteristic of theCRT display device is not disturbed.

[0019] It is still another object of this invention to provide a CRTdisplay device of the type described, which has superior quantityproduction.

[0020] Other objects of the present invention will become clear as thedescription proceeds.

[0021] According to a first aspect of the present invention, there isprovided a display device having a display window with a principalsurface. The display device comprises a magnetic loss layer formed on atleast a part of the principal surface.

[0022] According to a second aspect of the present invention, there isprovided a light emitting element having a light emitting window with aprincipal surface. The light emitting element comprises a magnetic losslayer formed on at least a part of the principal surface.

[0023] According to a third aspect of the present invention, there isprovided a plasma display panel having a front glass substrate with anouter surface. The plasma display panel comprises a magnetic loss layerformed on the outer surface.

[0024] According to a fourth aspect of the present invention, there isprovided a plasma display panel having a front glass substrate with aninner surface. The plasma display panel comprises a magnetic loss layerformed on the inner surface.

[0025] According to a fifth aspect of the present invention, there isprovided a cathode-ray tube, (CRT) display device comprising acathode-ray tube having a display panel with an inner surface. The CRTdisplay device comprises a magnetic loss layer formed on the innersurface.

[0026] According to a sixth aspect of the present invention, there isprovided a cathode-ray tube (CRT) display device comprising acathode-ray tube having a display panel with an outer surface. The CRTdisplay device comprises a magnetic loss layer formed on the outersurface.

BRIEF DESCRIPTION OF THE DRAWING

[0027]FIG. 1 is a schematic view showing a granular structure of M-X-Ymagnetic composition;

[0028]FIG. 2A is a schematic sectional view showing a structure of asputtering apparatus which was used in examples;

[0029]FIG. 2B is a schematic sectional view showing a structure of avapor deposition apparatus which was used in examples;

[0030]FIG. 3 is a graphical view showing a permeability frequencyresponse of layer sample 1 in Example 1;

[0031]FIG. 4 is a graphical view showing a permeability frequencyresponse of layer sample 2 in Example 2;

[0032]FIG. 5 is a graphical view showing a permeability frequencyresponse of comparable sample 1 in Comparable Example 1;

[0033]FIG. 6 is a schematic and perspective view of a test apparatus fortesting a noise suppressing effect of magnetic samples;

[0034]FIG. 7A is a graphic view showing a transmission characteristic oflayer sample 1;

[0035]FIG. 7B is a graphic view showing a transmission characteristic ofcomparable sample of composite magnetic material sheet;

[0036]FIG. 8A is a distribution constant circuit with a length l showinga magnetic material as a noise suppressor;

[0037]FIG. 8B is an equivalent circuit with a unit length Δl of thedistribution constant circuit of FIG. 12A;

[0038]FIG. 8C is an equivalent circuit with a length l of thedistribution constant circuit of FIG. 12A;

[0039]FIG. 9A is a graphic view showing a frequency response of anequivalent resistance R of layer sample 1 in Example 1; and

[0040]FIG. 9B is a graphic view showing a frequency response of anequivalent resistance R of comparative sample of a composite magneticmaterial sheet.

[0041]FIG. 10 is a front view of a light emitting element (laser diode)according to an embodiment of this invention;

[0042]FIG. 11 is a front view of a light emitting element (laser diode)according to another embodiment of this invention;

[0043]FIG. 12 is an exploded perspective view showing a part of aconventional plasma display panel;

[0044]FIG. 13 is an exploded perspective view of a conventional frontglass substrate as noise measure for use in the conventional plasmadisplay panel illustrated in FIG. 12;

[0045]FIG. 14 is an exploded perspective view of a part of a plasmadisplay panel according to a first embodiment of this invention;

[0046]FIG. 15 is an exploded perspective view of a part of a plasmadisplay panel according to a second embodiment of this invention;

[0047]FIG. 16 is an exploded perspective view of a part of a plasmadisplay panel according to a third embodiment of this invention;

[0048]FIG. 17 is an exploded perspective view of a part of a plasmadisplay panel according to a fourth embodiment of this invention;

[0049]FIG. 18 is an exploded perspective view of a part of a plasmadisplay panel according to a fifth embodiment of this invention;

[0050]FIG. 19 is an exploded perspective view of a part of a plasmadisplay panel according to a sixth embodiment of this invention;

[0051]FIG. 20 is an exploded perspective view of a part of a plasmadisplay panel according to a seventh embodiment of this invention;

[0052]FIG. 21 is an exploded perspective view of a part of a plasmadisplay panel according to an eighth embodiment of this invention;

[0053]FIG. 22 is a sectional view of a conventional cathode-ray tube(CRT) display device;

[0054]FIG. 23 is a sectional view of another conventional cathode-raytube (CRT) display device in which a noise measure is taken;

[0055]FIG. 24 is a sectional view of a cathode-ray tube (CRT) displaydevice according to a first embodiment of this invention;

[0056]FIG. 25 is an expanded sectional view of a neighborhood of adisplay panel for use in the CRT display device illustrated in FIG. 24;

[0057]FIG. 26 is an enlarged perspective view of a part of a displaypanel for use in the display device illustrated in FIG. 24;

[0058]FIG. 27 is a sectional view of a cathode-ray-tube (CRT) displaydevice according to a second embodiment of this invention;

[0059]FIG. 28 is an enlarged perspective view of a part of a displaypanel for use in the CRT display device illustrated in FIG. 27;

[0060]FIG. 29 is an enlarged perspective view of a part of a displaypanel for use in a cathode-ray tube (CRT) display device according to athird embodiment of this invention;

[0061]FIG. 30 is an enlarged perspective view of a part of a displaypanel for use in a cathode-ray tube (CRT) display device according to afourth embodiment of this invention;

[0062]FIG. 31 is an enlarged perspective view of a part of a displaypanel for use in a cathode-ray tube (CRT) display device according to afifth embodiment of this invention;

[0063]FIG. 32 is an enlarged perspective view of a part of a displaypanel for use in a cathode-ray tube (CRT) display device according to asixth embodiment of this invention; and

[0064]FIG. 33 is an enlarged perspective view of a part of a displaypanel for use in a cathode-ray tube (CRT) display device according to aseventh embodiment of this invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0065] Before the description will be made as to display devicesaccording to this invention, the description will be at first made to amagnetic loss layer for use in the display devices according to thisinvention. The magnetic loss layer has granular structure.

[0066] New, description will be made as to granular structure andproduction methods of M-X-Y magnetic composition.

[0067] Referring to FIG. 1 in which schematically shows the granularstructure of M-X-Y magnetic composition, particles 11 of metallicmagnetic material M are uniformly or evenly distributed in a matrix 12consisting of X and Y

[0068] Referring to FIG. 2A, a sputtering apparatus shown therein wasused for producing samples in the following examples and comparativeexamples. The sputtering apparatus has a conventional structure andcomprises a vacuum container 20, a shutter 21, an atmospheric gas source22, a substrate or a glass plate 23, chips 24 (X or X-Y), a target 25(M), an RF power source, and a vacuum pump 27. The atmospheric gassource 22 and the vacuum pump 27 are connected to the vacuum container20. The substrate 23 confronts to the target 25 on which chips 24 aredisposed. The shutter 21 is disposed in front of the substrate 21. TheRF power source 26 is connected to the target 25.

[0069] Referring to FIG. 2B, a vapor deposition apparatus shown thereinwas also used another apparatus for producing samples in the followingexamples and comparative examples. The vapor deposition apparatus has aconventional structure and has vacuum container 20, atmospheric gassource 22, and vacuum pump 27 similar to the sputtering apparatus buthas a crucible 28 including materials (X-Y) in place of chips 24, target25 and RF power source 26.

EXAMPLE 1

[0070] A thin layer of M-X-Y magnetic composition was made on a glassplate by use of the sputtering apparatus shown in FIG. 2A at asputtering condition shown in Table 1. TABLE 1 Vacuum degree beforesputtering <1 × 10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Fe(diameter of 100 mm) and Al₂O₃ chip (120 pieces) (chip size: 5 mm × 5 mm× 2 mm)

[0071] The layer sample 1 produced was analyzed by a fluorescent X-rayspectroscopy and confirmed as a layer of a composition Fe₇₂Al₁₁O₁₇. Thelayer sample 1 had 2.0 micrometer (μm) in thickness, 530 micro ohmcentimeters (μΩ·cm) in DC specific resistance, 18 Oe in anisotropy field(Hk), and 16,800 Gauss in saturation magnetization (Ms).

[0072] A percent ratio of the saturation magnetization of the layersample 1 and that of the metallic material M itself{Ms(M-X-Y)/Ms(M)}×100 was 72.2%.

[0073] In order to measure a permeability frequency response, the layersample 1 was formed in a ribbon like form and inserted in a coil. Underapplication of a bias magnetic field, an impedance variation of the coilwas measured in response to frequency change of AC current applied tothe coil. The measurement was several times for different values of thebias magnetic field. From the measured impedance variation in responseto frequency variation, the permeability frequency response (μ″-fresponse) was calculated and is shown in FIG. 3. It will be noted fromFIG. 3 that the imaginary part of relative permeability has a high peakor the maximum value (μ″_(max)) and rapidly falls either side of thepeak. The natural resonance frequency (f(μ″_(max))) showing the maximumvalue (μ″_(max)) is about 700 MHz. From the μ″-f response, a relativebandwidth bwr was determined as a percentage ratio of bandwidth betweentwo frequency points which shows the imaginary part of relativepermeability as a half value μ″₅₀ of the maximum value μ″_(max), tocenter frequency of said bandwidth. The relative bandwidth bwr was 148%.

EXAMPLE 2

[0074] In a condition similar to that in Example 1 but using of 150Al₂O₃ chips, a layer sample 2 was formed on a glass plate.

[0075] The layer sample 2 produced was analyzed by a fluorescent X-rayspectroscopy and confirmed as a layer of a composition Fe₄₄Al₂₂O₃₄. Thelayer sample 2 had 1.2 micrometer (μm) in thickness, 2400 micro ohmcentimeters (μΩ·cm) in DC specific resistance, 120 Oe in anisotropyfield (Hk), and 9600 Gauss in saturation magnetization (Ms). It will benoted that layer sample 2 is higher than layer sample 1 in the specificresistance.

[0076] A percent ratio of the saturation magnetization of the layersample 2 and that of the metallic material M itself{Ms(M-X-Y)/Ms(M)}×100 was 44.5%.

[0077] The μ″-f response of layer sample 2 was also obtained in thesimilar manner as in Example 1 and shows in FIG. 4. It is noted that thepeak has also a high value similar to that in layer sample 1. However,the frequency point at the peak, or the natural resonance frequency isabout 1 GHz and the imaginary part of relative permeability graduallyfalls either side of the peak so that the μ″-f response has a broadbandcharacteristic.

[0078] A relative bandwidth bwr of layer sample 2 was also confirmed as181% by the similar way as in Example 1.

COMPARATIVE EXAMPLE 1

[0079] In a condition similar to that in Example 1 but using of 90 Al₂O₃chips, a comparative sample 1 was formed on a glass plate.

[0080] The comparative sample 1 produced was analyzed by a fluorescentX-ray spectroscopy and confirmed as a layer of a composition Fe₈₆Al₆O₈.The comparative sample 1 had 1.2 micrometer (μm) in thickness, 74 microohm centimeters (μΩ·cm) in DC specific resistance, 22 Oe in anisotropyfield (Hk), 18,800 Gauss in saturation magnetization (Ms), and 85.7% ina percent ratio of the saturation magnetization of the comparativesample 1 and that of the metallic material M itself{Ms(M-X-Y)/Ms(M)}×100, and was 44.5%.

[0081] The μ″-f response of comparative sample 1 was also obtained inthe similar manner as in Example 1, and is shown in FIG. 5. It will benoted from FIG. 5 that the imaginary part μ″ of relative permeability ofthe comparative sample 1 has a high peak at a frequency about 10 MHz butrapidly reduces at the higher frequency range than 10 MHz. It can besupposed that this reduction is caused by generation of eddy current dueto the lower specific resistance.

COMPARATIVE EXAMPLE 2

[0082] In a condition similar to that in Example 1 but using of 200Al₂O₃ chips, a comparative sample 2 was formed on a glass plate.

[0083] The comparative sample 2 produced was analyzed by a fluorescentX-ray spectroscopy and confirmed as a layer of a compositionFe₁₉Al₃₄O₄₇. The comparative sample 2 had 1.3 micrometer (μm) inthickness, 10,500 micro ohm centimeters (μΩ·cm) in DC specificresistance.

[0084] The magnetic characteristic of comparative sample 1 exhibitedsuperparamagnetism.

EXAMPLE 4

[0085] A thin layer of M-X-Y magnetic composition was made on a glassplate by the reactive sputtering method using the sputtering apparatusshown in FIG. 2A at a sputtering condition shown in Table 2. The partialpressure ratio of N₂ was 20%. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 4. TABLE 2 Vacuum degree before sputtering <1 ×10⁻⁶ Torr Atmosphere Ar + N₂ gas Electric Power RF Targets Fe (diameterof 100 mm) and Al chip (150 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0086] The properties of layer sample 4 are show in Table 3. TABLE 3Layer thickness 1.5 μm {Ms(M-X-Y)/Ms(M)} × 100 51.9% μ″_(max) 520f(μ″_(max)) 830 MHz bwr 175%

EXAMPLE 5

[0087] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 4. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 5. TABLE 4 Vacuum degree before sputtering <1 ×10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Co (diameter of100 mm) and Al₂O₃ chip (130 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0088] The properties of layer sample 5 are show in Table 5. TABLE 5Layer thickness 1.1 μm {Ms(M-X-Y)/Ms(M)} × 100 64.7% μ″_(max) 850f(μ″_(max)) 800 MHz bwr 157%

EXAMPLE 6

[0089] A thin layer of M-X-Y magnetic composition was made on a glassplate by the reactive sputtering method using the sputtering apparatusshown in FIG. 2A at a sputtering condition shown in Table 6. The partialpressure ratio of N₂ was 10%. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 6. TABLE 6 Vacuum degree before sputtering <1 ×10⁻⁶ Torr Atmosphere Ar + N₂ gas Electric Power RF Targets Co (diameterof 100 mm) and Al chip (170 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0090] The properties of layer sample 6 are show in Table 7. TABLE 7Layer thickness 1.2 μm {Ms(M-X-Y)/Ms(M)} × 100 32.7% μ″_(max) 350f(μ″_(max)) 1 GHz bwr 191%

EXAMPLE 7

[0091] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 8. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 7. TABLE 8 Vacuum degree before sputtering <1 ×10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Ni (diameter of100 mm) and Al₂O₃ chip (140 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0092] The properties of layer sample 4 are show in Table 9. TABLE 9Layer thickness 1.7 μm {Ms(M-X-Y)/Ms(M)} × 100 58.2% μ″_(max) 280f(μ″_(max)) 240 MHz bwr 169%

EXAMPLE 8

[0093] A thin layer of M-X-Y magnetic composition was made on a glassplate by the reactive sputtering method using the sputtering apparatusshown in FIG. 2A at a sputtering condition shown in Table 10. Thepartial pressure ratio of N₂ was 10%. The thin layer was heat-treated ata temperature of 300° C. for two hours in vacuum under magnetic fieldand obtained a layer sample 8. TABLE 10 Vacuum degree before sputtering<1 × 10⁻⁶ Torr Atmosphere Ar + N₂ gas Electric Power RF Targets Ni(diameter of 100 mm) and Al chip (100 pieces) (chip size: 5 mm × 5 mm ×2 mm)

[0094] The properties of layer sample 10 are show in Table 11. TABLE 11Layer thickness 1.3 μm {Ms(M − X − Y)/Ms(M)} × 100 76.2% μ″_(max) 410f(μ″_(max)) 170 MHz bwr 158%

EXAMPLE 9

[0095] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 12. The thin layer Was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 9. TABLE 12 Vacuum degree before sputtering <1 ×10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Fe (diameter of100 mm) and TiO₂ chip (150 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0096] The properties of layer sample 9 are show in Table 13. TABLE 13Layer thickness 1.4 μm {Ms(M − X − Y)/Ms(M)} × 100 43.6% μ″_(max) 920f(μ″_(max)) 1.5 GHz bwr  188%

EXAMPLE 10

[0097] A thin layer of M-X-Y magnetic composition was made on a glassplate by the reactive sputtering method using the sputtering apparatusshown in FIG. 2A at a sputtering condition shown in Table 14. Thepartial pressure ratio of O₂ was 15%. The thin layer was heat-treated ata temperature of 300° C. for two hours in vacuum under magnetic fieldand obtained a layer sample 10. TABLE 14 Vacuum degree before sputtering<1 × 10⁻⁶ Torr Atmosphere Ar + O₂ gas Electric Power RF Targets Fe(diameter of 100 mm) and Si chip (130 pieces) (chip size: 5 mm × 5 mm ×2 mm)

[0098] The properties of layer sample 10 are show in Table 15. TABLE 15Layer thickness 1.5 μm {Ms(M − X − Y)/Ms(M)} × 100 55.2% μ″_(max) 920f(μ″_(max)) 1.2 GHz bwr  182%

EXAMPLE 11

[0099] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 16. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 11. TABLE 16 Vacuum degree before sputtering <1× 10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Fe (diameter of100 mm) and HfO₃ chip (100 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0100] The properties of layer sample 11 are show in Table 17. TABLE 17Layer thickness 1.8 μm {Ms(M − X − Y)/Ms(M)} × 100 77.4% μ″_(max) 1800f(μ″_(max)) 450 MHz bwr  171%

EXAMPLE 12

[0101] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 18. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 12. TABLE 18 Vacuum degree before sputtering <1× 10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Fe (diameter of100 mm) and BN chip (130 pieces) (chip size: 5 mm × 5 mm × 2 mm)

[0102] The properties of layer sample 12 are show in Table 19. TABLE 19Layer thickness 1.9 μm {Ms(M − X − Y)/Ms(M)} × 100 59.3% μ″_(max) 950f(μ″_(max)) 680 MHz bwr  185%

EXAMPLE 13

[0103] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the sputtering apparatus shown in FIG. 2A at a sputteringcondition shown in Table 20. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 13. TABLE 20 Vacuum degree before sputtering <1× 10⁻⁶ Torr Atmosphere Ar gas Electric Power RF Targets Fe₅₀Co₅₀(diameter of 100 mm) and Al₂O₃ chip (130 pieces) (chip size: 5 mm × 5 mm× 2 mm)

[0104] The properties of layer sample 13 are show in Table 21. TABLE 21Layer thickness 1.6 μm {Ms(M − X − Y)/Ms(M)} × 100 59.3% μ″_(max) 720f(μ″_(max)) 1.1 GHz bwr  180%

EXAMPLE 14

[0105] A thin layer of M-X-Y magnetic composition was made on a glassplate by using the vapor deposition apparatus shown in FIG. 2B at acondition shown in Table 22. The thin layer was heat-treated at atemperature of 300° C. for two hours in vacuum under magnetic field andobtained a layer sample 14. TABLE 22 Vacuum degree before sputtering <1× 10⁻⁶ Torr Atmosphere flowing rate O₂ at 3.0 sccm Elements in crucible28 and 29 Fe and Al

[0106] The properties of layer sample 14 are show in Table 23. TABLE 23Layer thickness 1.1 μm {Ms(M − X − Y)/Ms(M)} × 100 41.8% μ″_(max) 590f(μ″_(max)) 520 MHz bwr  190%

[0107] Now, description will be made as to tests relating to noisesuppressing effect of sample layers and comparative samples, using atest apparatus shown in FIG. 6.

[0108] A test piece was layer sample 1 with dimensions of 20 mm×20mm×2.0 μm. For a comparison, a sheet of known composite magneticmaterial having dimensions of 20 mm×20 mm×1.0 mm. The composite magneticmaterial comprising polymer and flat magnetic metal powder dispersed inthe polymer. The magnetic metal powder comprises Fe, Al and Si. Thecomposite magnetic material has a permeability distribution inquasi-microwave range and has the maximum value of the imaginary part ofrelative permeability at a frequency about 700 MHz. Table 24 showsmagnetic properties of both of the test piece and comparative testpiece. TABLE 24 Layer sample 1 Comparative test piece μ″/700 MHz about1800 about 3.0 bwr 148 196

[0109] As seen from Table 24, the layer sample 1 is about 600 times morethan comparative test piece in the maximum value of the imaginary partof relative permeability. Since the noise suppressing effect isgenerally evaluated from a value of a product (μ″_(max)×δ) of themaximum value μ″_(max) of the imaginary part of relative permeabilityand thickness of the piece δ, the thickness of the comparative testpiece of the composite magnetic material sheet was selected 1 mm so thatthe both of test pieces have the similar values of (μ″_(max)×δ).

[0110] Referring to FIG. 6, the test apparatus comprises a micro-stripline 61 having two ports, coaxial cables 62 connected to the two ports,and a network analyzer (not shown) connected across the two ports. Themicro-strip line 61 has a line length of 75 mm and a characteristicimpedance of 50 ohms. The test piece 63 was disposed at a region 64 onthe micro-strip line 61 and the transmission characteristic S21 wasmeasured. The frequency response of S21 are shown in FIGS. 11A and 11Bfor layer sample 1 and the comparative sample, respectively.

[0111] With respect to use of layer sample 1, it will be noted from FIG.7A that S21 reduces above 100 MHz, becomes to the minimum of −10 dB at afrequency of 2 GHz and then increases above 2 GHz. On the other hand,with respect to use of comparative sample, it will be noted from FIG. 7Bthat S21 gradually reduces and becomes to the minimum of −10 dB at afrequency of 3 GHz.

[0112] The results demonstrate that S21 is dependent on the frequencydistribution of the permeability and that the noise suppressing effectis dependent on the product of (μ″_(max)×δ).

[0113] Now, providing that the magnetic sample forms a distributionconstant circuit having a length of l as shown in FIG. 8A, an equivalentcircuit was calculated for a unit length of Δl from transmissioncharacteristics S11 and S21, as shown in FIG. 8B. Then, the equivalentcircuit for the length l was obtained from the equivalent circuit forthe unit length Δl, as shown in FIG. 8C. The equivalent circuit of themagnetic sample comprises series inductance L and resistance R andparallel capacitance C and conductance G, as shown in FIG. 8C. Fromthis, it will be understood that the change of transmissioncharacteristic of the micro-strip line caused due to disposition of themagnetic substance on the micro-strip line is mainly determined by theequivalent resistance R added in series.

[0114] In view of the above, a frequency response of the equivalentresistance R was measured. The measured data were shown in FIGS. 9A and9B for the layer sample 1 and the comparative sample, respectively. Itwill be noted from these figures that the equivalent resistance Rgradually reduces in the quasi-microwave range and is about 60 ohms atabout 3 GHz. It is seen that the frequency dependency of the equivalentresistance R is different from that of the imaginary part of relativepermeability which has the maximum value at about 1 GHz. It will besupposed that this difference will be based on the gradual increase of aratio of the product and the sample length to the wavelength.

[0115] Referring to FIG. 10, description will be made of a displaydevice according to an embodiment of this invention. The illustrateddisplay device exemplifies a light emitting element 70. The illustratedlight emitting element 70 is a laser diode for use in an optical pickupfor an optical disk drive.

[0116] The light emitting element (laser diode) 70 comprises a base 71,a laser diode chip 72 mounted on the base 71, a resinous light emittingwindow 73 attached to the base 71 so as to cover the laser diode chip71, and three legs 74 extending from the base in the opposite directionto the light emitting window 73. The light emitting window 73 serves asa display window of the display device. The light emitting window 73 hasa principal surface 73 a.

[0117] In the light emitting element (laser diode) 70 having such astructure, according to the first embodiment of this invention, amagnetic loss layer or film 75 is formed on a lower part (the base 71side) of the principal surface 73 a of the light emitting window 73. Inthe example being illustrated, the magnetic loss layer 75 is formed in amesh fashion. In other words, the magnetic loss layer 75 is a meshedmagnetic loss layer.

[0118] The reason why the meshed magnetic loss layer 75 is formed on thelower part of the principal surface 73 a of the light emitting window 73is that a laser beam emitted from the laser diode chip 72 is notinterrupted by the meshed magnetic loss layer 75 to pass through thelight emitting window 73.

[0119] As the meshed magnetic loss layer 75, a granular magnetic thinlayer or film may be used in the manner which is described above. Such agranular magnetic thin layer may be manufactured by using sputteringprocess, vapor deposition process, or reactive sputtering process. Inother words, the granular magnetic thin layer may be a sputtered filmformed by the sputtering process or the reactive sputtering process or avapor-deposited film formed by the vapor deposition process. Uponmanufacturing the granular magnetic thin layer, the above-mentionedsputtered film or the above-mentioned vapor-deposited film are reallyheat-treated at a predetermined temperature for a predetermined timeinterval in vacuum under magnetic field.

[0120] In the above-mentioned embodiment of this invention, inasmuch asit is necessary to form the magnetic loss layer (granular magnetic thinlayer) 75 in the mesh fashion, such a meshed magnetic loss layer may bea sputtered film formed by the sputtering process using a mask, avapor-deposited film formed by the vapor deposition process using amask, or a crosshatched film formed by crosshatching a magnetic losswire made of a granular magnetic material.

[0121] The present inventors already confirmed in an experiment that thegranular magnetic thin layer formed in the manner as described above hasa very large magnetic loss in a high frequency within the frequency bandbetween several tens of MHz and several GHz although the granularmagnetic thin layer has a thin film thickness of, for example, 2.0 μm orless.

[0122] In addition, the present inventors already confirmed in anexperiment that the granular magnetic thin layer, which has dispersionof an imaginary part (i.e., a “magnetic loss term”) μ″ of relativepermeability in a quasi-microwave band, according to this invention hasa high-frequency noise suppression effect which is equivalent to that ina conventional complex magnetic sheet having a thickness of about fivehundreds times as large as a thickness of the granular magnetic thinlayer. Accordingly, the granular magnetic thin layer according to thisinvention is in prospect as a magnetic substance adapted for use insuppression of electromagnetic interference (EMI) in, for example, asemiconductor integrated element which is operable at a high-speed clockof about 1 GHz.

[0123] Although examples manufactured by using the sputtering processusing the mask, the vapor deposition process, or the reactive sputteringprocess are exemplifies as methods of manufacturing the granularmagnetic thin layers in the embodiment of this invention, othermanufacturing methods such as vacuum deposition process, ion beamdeposition process, or gas deposition process may be used upon formingthe granular magnetic thin layers. Manufacturing methods may be notrestricted if the methods can uniformly form the magnetic loss layeraccording to this invention.

[0124] In addition, although the heat treatment after layer productionis carried out in vacuum under magnetic field in the above-mentionedembodiment, the heat treatment after layer production is not necessaryif the granular magnetic thin layer is a layer which is formed by thegas deposition process and which has a composition or a layer productionmethod where performance of this invention is obtained.

[0125] Furthermore, although the laser diode is exemplified as the lightemitting element 70 and the magnetic loss layer 75 is formed on theprincipal surface 73 a of the light emitting window 73 of the laterdiode in the above-mentioned embodiment, the display device may be ainfrared I/O unit of a remote controller and the magnetic loss layer maybe formed on a principal surface of a light emitting window thereof. Thedisplay device may be a liquid crystal display device of anactive-matrix type comprising a plurality of thin layer transistors(TFTs) and the magnetic loss layer may be formed on a principal surfaceof a display window thereof. In addition, although the meshed magneticloss layer 75 is formed on a part of the principal surface 73 a of thelight emitting window 73 in the light emitting element 70 in theabove-mentioned embodiment, the meshed magnetic loss layer may be, forexample, formed on all over the principal surface 73 a of the lightemitting window 73. The magnetic loss layer may be formed in a stripefashion, a lattice fashion, or a checker fashion in place of the meshfashion. At any rate, the magnetic loss layer may be formed with space.Although the description is exemplified in the above-mentionedembodiment in a case where the magnetic loss layer 75 of the lightemitting element 70 is formed in the mesh fashion, as shown in FIG. 11,a sheet-like magnetic loss layer 75A of a light emitting element 70A maycover, in a case of forming the magnetic loss layer in only the lowerpart of the principal surface 73 a of the light emitting window 73, allof the lower part of the principal surface 73 a of the light emittingwindow 73 so that the laser beam emitted form the laser diode chip 72 isnot intercepted to pass though the light emitting window 73.

[0126] In addition, although the description is exemplified in a casewhere the magnetic loss layer 75 is the granular magnetic thin layer inthe above-mentioned embodiment, the magnetic loss layer 75 may not berestricted to the granular magnetic thin layer and may be any layerhaving a very large magnetic loss in a high frequency within thefrequency band between several tens of MHz and several GHz.

[0127] Referring to FIG. 12, the description will proceed to aconventional plasma display panel (PDP) 80′ used as one of the displaydevices. The plasma display panel 80′ comprises first and second glasssubstrates 81 and 82 which are opposed to each other with a gap lefttherebetween. The first glass substrate 81 is disposed at the frontwhile the second glass substrate 82 is disposed at the rear.Accordingly, the first glass substrate 81 is called a front glasssubstrate while the second glass substrate 82 is called a rear glasssubstrate. The front glass substrate 81 serves as the display window.The front glass substrate 81 and the rear glass substrate 82 have frontand rear inner surfaces 81 a and 82 a, respectively, at opposite innersides and front and rear outer surfaces 81 b and 82 b, respectively, atopposite outer sides. A plurality of front electrodes 83 extend in apredetermined direction parallel to one another and are formed on thefront inner surface 81 a of the front glass substrate 81 in strips. Eachfront electrode 83 is formed as a transparent electrode which is made ofa transparent material such as SnO₂, ITO, or the like. The plurality offront electrodes 83 are covered with a first dielectric layer 84. Aplurality of rear electrodes 85 extend in a direction perpendicular tothe predetermined direction parallel to one another and formed on therear inner surface 82 a of the rear glass substrate 82 in strips. Eachrear electrode 85 is made, for example, of Ag. The plurality of rearelectrodes 85 are covered with a second dielectric layer 86. A pluralityof barrier ribs 87 are disposed between the first and the seconddielectric layers 84 and 85.

[0128] Dischargeable rare gas (not shown) is enclosed in the spacebetween the front and the rear glass substrates 81 and 82 with thecircumference sealed tightly. The space is partitioned into a pluralityof partial spaces by the barrier ribs, as shown in FIG. 12. Thedischargeable rare gas generates a lot of ultraviolet rays ondischarging.

[0129] Such a plasma display panel 80′ is called an oppositedischarge-type plasma display panel. The plasma display panel 80′generates discharge rays between the front electrodes 84 and the rearelectrodes 85 that are observed through the front electrodes 83 actingas the transparent electrodes. Accordingly, the plasma display panel 80′generates or radiates electromagnetic waves from all over the panelsurface of the plasma display panel 80′ in accordance with the principleof its discharge. Those generated electromagnetic waves serve asinterference electromagnetic waves in other parts or other apparatuses.As a measure for suppressing the interference electromagnetic waves, asillustrated in FIG. 13, a front glass substrate 81′ is divided into twosub-substrates 811′ and 812′ in a thickness direction and a conductivemesh 88′ is disposed or sandwiched between the two sub-substrates 811′and 812′.

[0130] However, the measure for suppressing the interferenceelectromagnetic waves with regard to the conventional plasma displaypanel becomes an issue as follows. At first, the conventional plasmadisplay panel is disadvantageous in that the number of parts isincreased and work hours required to assemble are also increased becausethe front substrate 81′ is divided into the two sub-substrates 811′ and812′ in the conventional plasma display panel. Secondly, the conductivemesh 88′ disposed within the front substrate 81′ results in degrading anoptical characteristic of the PDP. Thirdly, as regards absorption ofelectromagnetic waves in the conductive mesh 88′, the conductive mesh88′ has a restricted frequency band up to a frequency band of the orderof MHz that is capable of absorbing the electromagnetic waves. That is,the conventional plasma display panel is disadvantageous in that theconductive mesh 88′ cannot cope with absorption of the electromagneticwaves up to a frequency band of the order of GHz which becomes an issuein resent years, as mentioned in the preamble of the instantspecification.

[0131] Referring to FIG. 14, the description will proceed to a plasmadisplay panel (PDP) 80 according to a first embodiment of thisinvention. The plasma display panel 80 is similar in structure andoperation to the conventional display panel 80′ illustrated in FIG. 12except that the plasma display panel 80 further comprises a magneticloss layer 88.

[0132] The magnetic loss layer 88 is formed on the front outer surface81 b of the front substrate 81. In the example being illustrated, themagnetic loss layer 88 is formed in a mat fashion. In other words, themagnetic loss layer 88 is a sheet-like magnetic loss layer for coveringa whole surface of the front outer surface 81 b of the front substrate81.

[0133] The sheet-like magnetic loss layer 88 is made of a magneticsubstance of a magnetic composition comprising M, X and Y, where M is ametallic magnetic material consisting of Fe, Co, and/or Ni, X beingelement or elements other than M and Y, and Y being F, N, and/or O.

[0134] In the example being illustrated, the sheet-like magnetic losslayer 88 is a layer of a composition Fe₇₂Al₁₁O₁₇ as exemplified by theabove-mentioned Example 1. The sheet-like magnetic loss layer 88 havingthe last-mentioned composition has a superior absorption characteristicof electromagnetic waves in a frequency band, in particular, between afrequency band of MHz and a frequency band of GHz and can efficientlysuppress the electromagnetic waves in the above-mentioned frequency bandgenerated from the PDP 80.

[0135] In addition, inasmuch as the sheet-like magnetic loss layer 88 iscombination having an extremely large magnetic loss, it is possible toparticularly thin the magnetic loss layer 88 in comparison with aconventional sheet-like wave absorber. Accordingly, the sheet-likemagnetic loss layer 88 may have a thickness of several tens of micronsor less. At about 3 GHz, the absorption characteristic of theelectromagnetic waves in the sheet-like magnetic loss layer 88 has anabsorption effect of the electromagnetic waves by nine through twelvedecibels in all areas of a display surface thereof in comparison with acase of only the glass substrate like in the conventional PDPillustrated in FIG. 12. A method of manufacturing the sheet-likemagnetic loss layer 88 may be sputtering process or vapor depositionprocess. In addition, the sheet-like magnetic loss layer 88 may beformed by a layer production process except for the above-mentionedsputtering process, for example, by chemical vapor deposition (CVD)process or the like.

[0136] In the manner which is described above, it is possible to easilyintroduce a fabrication process of the above-mentioned sheet-likemagnetic loss layer 88 into a whole fabrication process of the PDP 80.

[0137] Referring to FIG. 15, the description will proceed to a plasmadisplay panel (PDP) 80A according to a second embodiment of thisinvention. The plasma display panel 80A is similar in structure andoperation to the plasma display panel 80 illustrated in FIG. 14 exceptthat the sheet-like magnetic loss layer 88 is formed on the front innersurface 81 a of the front substrate 81 in lieu of the front outersurface 81 b of the front substrate 81. With this structure, the plasmadisplay panel 80A has similar merits to the plasma display panel 80illustrated in FIG. 14.

[0138] Referring to FIG. 16, the description will proceed to a plasmadisplay panel (PDP) 80B according to a third embodiment of thisinvention. The plasma display panel 80B is similar in structure andoperation to the plasma display panel 80 illustrated in FIG. 14 exceptthat the magnetic loss layer is modified from that illustrated in FIG.14 as will later become clear. The magnetic loss layer is thereforedepicted at 88A.

[0139] The magnetic loss layer 88A is formed in a lattice fashion. Inother words, the magnetic loss layer 88A is a latticed magnetic losslayer. The latticed magnetic loss layer 88A may preferably be arrangedso as to correlate arrangement of the front electrodes 83 andarrangement of the rear electrodes 85.

[0140] The latticed magnetic loss layer 88A is made of a magneticsubstance which is similar to that of the sheet-like magnetic loss layer88 illustrated in FIG. 14. The latticed magnetic loss layer 88A has asuperior absorption characteristic of electromagnetic waves in afrequency band, in particular, between a frequency band of MHz and afrequency band of GHz and can efficiently suppress the electromagneticwaves in the above-mentioned frequency band generated from the PDP 80B.In addition, inasmuch as the magnetic loss layer 88A is combinationhaving an extremely large magnetic loss, it is possible to particularlythin the latticed magnetic loss layer 88A in comparison with aconventional sheet-like wave absorber. Accordingly, the latticedmagnetic loss layer 88A may have a thickness of several tens of micronsor less. At about 3 GHz, the absorption characteristic of theelectromagnetic waves in the latticed magnetic loss layer 88A has anabsorption effect of the electromagnetic waves by nine through elevendecibels in all areas of a display surface thereof in comparison with acase of only the glass substrate like in the conventional PDP 80′illustrated in FIG. 12.

[0141] A method of manufacturing the latticed magnetic loss layer 88Amay be sputtering process using a mask or a combination of thesputtering process and patterning process. In addition, the latticedmagnetic loss layer 88A may be formed by a layer production processexcept for the above-mentioned sputtering process, for example, bychemical vapor deposition (CVD) process or the like.

[0142] In the manner which is described above, it is possible to easilyintroduce a fabrication process of the above-mentioned latticed magneticloss layer 88A into a whole fabrication process of the PDP 80B.

[0143] Referring to FIG. 17, the description will proceed to a plasmadisplay panel (PDP) 80C according to a fourth embodiment of thisinvention. The plasma display panel 80C is similar in structure andoperation to the plasma display panel 80B illustrated in FIG. 16 exceptthat the latticed magnetic loss layer 88A is formed on the front innersurface 81 a of the front substrate 81 in lieu of the front outersurface 81 b of the front substrate 81. With this structure, the plasmadisplay panel 80C has similar merits to the plasma display panel 80Billustrated in FIG. 16.

[0144] Referring to FIG. 18, the description will proceed to a plasmadisplay panel (PDP) 80D according to a fifth embodiment of thisinvention. The plasma display panel 80D is similar in structure andoperation to the plasma display panel 80B illustrated in FIG. 16 exceptthat the magnetic loss layer is modified from that illustrated in FIG.16 as will later become clear. The magnetic loss layer is thereforedepicted at 88B.

[0145] The magnetic loss layer 88B is formed in a stripe fashion. Inother words, the magnetic loss layer 88B is a striped magnetic losslayer. With this structure, the plasma display panel 80D has similarmerits to the plasma display panel 80B illustrated in FIG. 16.

[0146] Referring to FIG. 19, the description will proceed to a plasmadisplay panel (PDP) 80E according to a sixth embodiment of thisinvention. The plasma display panel 80E is similar in structure andoperation to the plasma display panel 80D illustrated in FIG. 18 exceptthat the striped magnetic loss layer 88B is formed on the front innersurface 81 a of the front substrate 81 in lieu of the front outersurface 81 b of the front substrate 81. With this structure, the plasmadisplay panel 80E has similar merits to the plasma display panel 80Dillustrated in FIG. 18.

[0147] Referring to FIG. 20, the description will proceed to a plasmadisplay panel (PDP) 80F according to a seventh embodiment of thisinvention. The plasma display panel 80F is similar in structure andoperation to the plasma display panel 80 illustrated in FIG. 14 exceptthat the magnetic loss layer is modified from that illustrated in FIG.14 as will later become clear. The magnetic loss layer is thereforedepicted at 88C.

[0148] The magnetic loss layer 88C is formed in a speck fashion. Inother words, the magnetic loss layer 88C is a specked magnetic losslayer. The specked magnetic loss layer 88C may preferably be arranged soas to correlate arrangement of the front electrodes 83 and arrangementof the rear electrodes 85.

[0149] The specked magnetic loss layer 88C is made of a magneticsubstance which is similar to that of the sheet-like magnetic loss layer88 illustrated in FIG. 14. The specked magnetic loss layer 88C has asuperior absorption characteristic of electromagnetic waves in afrequency band, in particular, between a frequency band of MHz and afrequency band of GHz and can efficiently suppress the electromagneticwaves in the above-mentioned frequency band generated from the PDP 80F.In addition, inasmuch as the specked magnetic loss layer 88C iscombination having an extremely large magnetic loss, it is possible toparticularly thin the specked magnetic loss layer 88C in comparison witha conventional sheet-like wave absorber. Accordingly, the speckedmagnetic loss layer 88C may have a thickness of several tens of micronsor less. At about 3 GHz, the absorption characteristic of theelectromagnetic waves in the specked magnetic loss layer 88C has anabsorption effect of the electromagnetic waves by nine through twelvedecibels in all areas of a display surface thereof in comparison with acase of only the glass substrate like in the conventional PDP 80′illustrated in FIG. 12.

[0150] A method of manufacturing the specked magnetic loss layer 88C maybe sputtering process using a mask or a combination of the sputteringprocess and patterning process. The method of manufacturing the speckedmagnetic loss layer 88C may be vapor deposition process using a mask ora combination of the vapor deposition process and patterning process. Inaddition, the method of manufacturing the specked magnetic loss layer88C may be a screen printing using a mask. Furthermore, the speckedmagnetic loss layer 88C may be formed by a layer production processexcept for the above-mentioned sputtering process, for example, bychemical vapor deposition (CVD) process or the like.

[0151] In the manner which is described above, it is possible to easilyintroduce a fabrication process of the above-mentioned specked magneticloss layer 88C into a whole fabrication process of the PDP 80F.

[0152] Referring to FIG. 21, the description will proceed to a plasmadisplay panel (PDP) 80G according to an eighth embodiment of thisinvention. The plasma display panel 80G is similar in structure andoperation to the plasma display panel 80F illustrated in FIG. 20 exceptthat the specked magnetic loss layer 88C is formed on the front innersurface 81 a of the front substrate 81 in lieu of the front outersurface 81 b of the front substrate 81. With this structure, the plasmadisplay panel 80G has similar merits to the plasma display panel 80Fillustrated in FIG. 20.

[0153] Referring to FIG. 22, the description will proceed to aconventional cathode-ray tube (CRT) display device 90′ used as anotherone of the display devices. In the manner known in the art, thecathode-ray tube display device 90′ is used, for example, as atelevision (TV) picture tube of a television set, a monitor for apersonal computer, or the like. Originally, a cathode-ray tube (CRT) isknown as Braun tube or as an electron-ray tube. The CRT display device90′ comprises a cathode-ray tube 91 or a glass vessel having anevacuated space inside and a deflecting yoke 92. The cathode-ray tube 91comprises a display panel 93 having an inner surface 93 a and an outersurface 93 b, fluorescent substances or phosphor 94 having apredetermined pattern formed on the inner surface 93 a of the displaypanel 93, a shadow mask 95 opposite to the display panel 93 with thefluorescent substances 94 disposed therebetween, and an electron gun 96.The display panel 93 acts as the display window. The electron gun 96radiates an electron beam EB which passes through one of hollow holes ofthe shadow mask 95 and hits on a position of the fluorescent substances94 to make the position of the fluorescent substances 94 emit.

[0154] The CRT display device 90′ generates or radiates interferenceelectromagnetic waves when the electron beam EB hits on the position ofthe fluorescent substances 94 to make the position of the fluorescentsubstances 94 emit. As a measure for suppressing the interferenceelectromagnetic waves in the conventional CRT display device 90′, asillustrated in another conventional CRT display device 90″ of FIG. 23, aconductive mesh 97′ is embedded in the display panel 93 in thecathode-ray tube 91.

[0155] However, the CRT display device 90″ provided with the conductivemesh 97′ is disadvantageous in that image quality of the CRT displaydevice 90″ is degraded because the conductive mesh 97′ interruptsemission in the fluorescent substances 94 and the conductive mesh 97′has a low absorption efficiency of the interference electromagneticwaves if the conductive mesh 97′ has a low arrangement density in orderto improve the image quality. The CRT display device 90″ provided withthe conductive mesh 97′ is also disadvantageous in that a productioncost thereof becomes high to embed the conductive mesh 97′ in thedisplay panel 93. Furthermore, the conductive mesh 97′ has a frequencyband enable to absorb the electromagnetic waves that is restricted up toa frequency band of the order of MHz. That is, the CRT display device90″ provided with the conductive mesh 97′ is disadvantageous in that theconductive mesh 97′ cannot cope with absorption of the electromagneticwaves up to a frequency band of the order of GHz which becomes an issuein resent years, as also mentioned in the preamble of the instantspecification.

[0156] Referring to FIGS. 24, 25, and 26, the description will proceedto a cathode-ray tube (CRT) display device 90 according to a firstembodiment of this invention. The CRT display device 90 is similar instructure and operation to the conventional CRT display device 90′illustrated in FIG. 22 except that the CRT display device 90 furthercomprises a magnetic loss layer 97.

[0157] The magnetic loss layer 97 is formed on the inner surface 93 a ofthe display panel 93. In the example being illustrated in FIG. 26, themagnetic loss layer 97 is formed in a lattice fashion. In other words,the magnetic loss layer 97 is a latticed magnetic loss layer Such alatticed magnetic loss layer 97 may suitably be selected in accordancewith a size and a shape of the CRT 91 and an intended purpose of the CRTdisplay device.

[0158] The latticed magnetic loss layer 97 is made of a magneticsubstance of a magnetic composition comprising M, X and Y, where M is ametallic magnetic material consisting of Fe, Co, and/or Ni, X beingelement or elements other than M and Y, and Y being F, N, and/or O. Inthe example being illustrated, the sheet-like magnetic loss layer 97 isa layer of a composition Fe₇₂Al₁₁O₁₇ as exemplified by theabove-mentioned Example 1.

[0159] The latticed magnetic loss layer 97 having the last-mentionedcomposition has a superior absorption characteristic of electromagneticwaves in a frequency band, in particular, between a frequency band ofMHz and a frequency band of GHz and can efficiently suppress theelectromagnetic waves in the above-mentioned frequency band generatedfrom the CRT display device 90.

[0160] In addition, inasmuch as the latticed magnetic loss layer 97 iscombination having an extremely large magnetic loss, it is possible toparticularly thin the latticed magnetic loss layer 97 in comparison witha conventional sheet-like wave absorber. Accordingly, the latticedmagnetic loss layer 97 may have a thickness of several tens of micronsor less.

[0161] At about 3 GHz, the absorption characteristic of theelectromagnetic waves in the latticed magnetic loss layer 97 has anabsorption effect of the electromagnetic waves by about ten decibels incomparison with a case of only the glass vessel like in the conventionalCRT display device 90′ illustrated in FIG. 22.

[0162] A method of manufacturing the latticed magnetic loss layer 97 maybe sputtering process or vapor deposition process using a metallic mask.Specifically, the method of manufacturing the latticed magnetic losslayer 97 comprises the steps of carrying out the sputtering process orthe vapor deposition process using the metallic mask and of removing themetallic mask to form a predetermined pattern. The method ofmanufacturing the latticed magnetic loss layer 97 may be a combinationof the sputtering process and patterning process. Specifically, themethod of manufacturing the latticed magnetic loss layer 97 comprisesthe steps of carrying out the sputtering process or the vapor depositionprocess and of carrying out lithography using a resist to form apredetermined pattern. In addition, the latticed magnetic loss layer 97may be formed by a layer production process except for theabove-mentioned sputtering process, for example, by chemical vapordeposition (CVD) process or the like.

[0163] In the manner which is easily understood from theabove-description, it is possible to easily introduce a fabricationprocess of the above-mentioned latticed magnetic loss layer 97 in thesimilar manner in that of the fluorescent substances 94 into a wholefabrication process of the CRT display device 90.

[0164] Referring to FIGS. 27 and 28, the description will proceed to acathode-ray tube (CRT) display device 90A according to a secondembodiment of this invention. The CRT display device 90A is similar instructure and operation to the CRT display device 90 illustrated inFIGS. 24 through 26 except that the latticed magnetic loss layer 97 isformed on the outer surface 93 b of the display panel 93 in lieu of theinner surface 93 a of the display panel 93. With this structure, the CRTdisplay device 90A has similar merits to the CRT display device 90illustrated in FIGS. 24 through 25.

[0165] In addition, at about 3 GHz, the absorption characteristic of theelectromagnetic waves in the latticed magnetic loss layer 97 has anabsorption effect of the electromagnetic waves by about seven decibelsin comparison with a case of only the glass vessel like in theconventional CRT display device 90′ illustrated in FIG. 22. The reasonwhy the absorption effect of the electromagnetic waves is decreased byabout three decibels in a case of the CRT display device 90 illustratedin FIGS. 24 through 26 is because the fluorescent substances 94 and thelatticed magnetic loss layer 97 are apart from each other by a distancecorresponding to a thickness of the display panel 93 of the CRT 91.

[0166] In the manner which is easily understood from theabove-description, it is possible to easily introduce a fabricationprocess of the above-mentioned latticed magnetic loss layer 97 into anystage within a whole fabrication process of the CRT display device 90A.

[0167] Referring to FIG. 29, the description will proceed to acathode-ray tube (CRT) display device 90B according to a thirdembodiment of this invention. The CRT display device 90B is similar instructure and operation to the CRT display device 90 illustrated in FIG.26 except that the magnetic loss layer is modified from that illustratedin FIG. 26 as will later become clear. The magnetic loss layer istherefore depicted at 97A.

[0168] The magnetic loss layer 97A is formed in a stripe fashion. Inother words, the magnetic loss layer 97A is a striped magnetic losslayer. With this structure, the CRT display device 90B has similarmerits to the CRT display device 90 illustrated in FIG. 26.

[0169] Referring to FIG. 30, the description will proceed to acathode-ray tube (CRT) display device 90C according to a fourthembodiment of this invention. The CRT display device 90C is similar instructure and operation to the CRT display device 90B illustrated inFIG. 29 except that the striped magnetic loss layer 97A is formed on theouter surface 93 b of the display panel 93 in lieu of the inner surface93 a of the display panel 93. With this structure, the CRT displaydevice 90C has similar merits to the CRT display device 90A illustratedin FIG. 28.

[0170] Referring to FIG. 31, the description will proceed to acathode-ray tube (CRT) display device 90D according to a fifthembodiment of this invention. The CRT display device 90D is similar instructure and operation to the CRT display device 90 illustrated in FIG.26 except that the magnetic loss layer is modified from that illustratedin FIG. 26 as will later become clear. The magnetic loss layer istherefore depicted at 97B.

[0171] The magnetic loss layer 97B is formed in a speck fashion. Inother words, the magnetic loss layer 97B is a specked magnetic losslayer. Such a specked magnetic loss layer 97B may suitably be selectedin accordance with a size and a shape of the CRT 91 and an intendedpurpose of the CRT display device.

[0172] The specked magnetic loss layer 97B is made of a magneticsubstance which is similar to that of the latticed magnetic loss layer97 illustrated in FIG. 26. The specked magnetic loss layer 97B has asuperior absorption characteristic of electromagnetic waves in afrequency band, in particular, between a frequency band of MHz and afrequency band of GHz and can efficiently suppress the electromagneticwaves in the above-mentioned frequency band generated from the CRTdisplay device 90D. In addition, inasmuch as the specked magnetic losslayer 97B is combination having an extremely large magnetic loss, it ispossible to particularly thin the specked magnetic loss layer 97B incomparison with a conventional sheet-like wave absorber. Accordingly,the specked magnetic loss layer 97B may have a thickness of several tensof microns or less. At about 3 GHz, the absorption characteristic of theelectromagnetic waves in the specked magnetic loss layer 97B has anabsorption effect of the electromagnetic waves by about ten decibels incomparison with a case of only the glass vessel like in the conventionalCRT display device 90′ illustrated in FIG. 22.

[0173] A method of manufacturing the specked magnetic loss layer 97B maybe sputtering process or vapor deposition process using a metallic mask.Specifically, the method of manufacturing the specked magnetic losslayer 97B comprises the steps of carrying out the sputtering process orthe vapor deposition process using the metallic mask and of removing themetallic mask to form a predetermined pattern. The method ofmanufacturing the specked magnetic loss layer 97B may be a combinationof the sputtering process and patterning process. Specifically, themethod of manufacturing the specked magnetic loss layer 97B comprisesthe steps of carrying out the sputtering process or the vapor depositionprocess and of carrying out lithography using a resist to form apredetermined pattern. In addition, the specked magnetic loss layer 97Bmay be formed by a layer production process except for theabove-mentioned sputtering process, for example, by chemical vapordeposition (CVD) process or the like.

[0174] In the manner which is easily understood from theabove-description, it is possible to easily introduce a fabricationprocess of the above-mentioned specked magnetic loss layer 97B in thesimilar manner in that of the fluorescent substances 94 into a wholefabrication process of the CRT display device 90D.

[0175] Referring to FIG. 32, the description will proceed to acathode-ray tube (CRT) display device 90E according to a sixthembodiment of this invention. The CRT display device 90E is similar instructure and operation to the CRT display device 90D illustrated inFIG. 31 except that the specked magnetic loss layer 97B is formed on theouter surface 93 b of the display panel 93 in lieu of the inner surface93 a of the display panel 93. With this structure, the CRT displaydevice 90E has similar merits to the CRT display device 90C illustratedin FIG. 30.

[0176] Referring to FIG. 33, the description will proceed to acathode-ray tube (CRT) display device 90F according to a seventhembodiment of this invention. The CRT display device 90F is similar instructure and operation to the CRT display device 90A illustrated inFIG. 28 except that the magnetic loss layer is modified from thatillustrated in FIG. 28 as will later become clear. The magnetic losslayer is therefore depicted at 97C.

[0177] The magnetic loss layer 97C is formed in a mat fashion. In otherwords, the magnetic loss layer 97C is a sheet-like magnetic loss layer.Such a sheet-like magnetic loss layer 97C may suitably be selected inaccordance with a size and a shape of the CRT 91 and an intended purposeof the CRT display device.

[0178] A method of manufacturing the sheet-like magnetic loss layer 97Cmay be sputtering process or vapor deposition process. In addition, thesheet-like magnetic loss layer 97C may be formed by a layer productionprocess except for the above-mentioned sputtering process, for example,by chemical vapor deposition (CVD) process or the like.

[0179] In the manner which is easily understood from theabove-description, it is possible to easily introduce a fabricationprocess of the above-mentioned sheet-like magnetic loss layer 97C intoany stage within a whole fabrication process of the CRT display device90F.

[0180] With this structure, the CRT display device 90F has similarmerits to the CRT display device 90A illustrated in FIG. 28.

[0181] While this invention has thus for been described in conjunctionwith preferred embodiments thereof, it will now be readily possible forthose skilled in the art to put this invention into various othermanners. For example, display devices to which this invention isapplicable are not restricted to those in the above-mentionedembodiments.

What is claimed is:
 1. A display device having a display window with aprincipal surface, said display device comprising a magnetic loss layerformed on at least a part of said principal surface.
 2. A display deviceas claimed in claim 1, wherein said magnetic loss layer is a granularmagnetic thin layer with a magnetic composition comprising M, X and Y,where M is a metallic magnetic material consisting of Fe, Co, and/or Ni,X being element or elements other than M and Y, and Y being F, N, and/orO.
 3. A display device as claimed in claim 2, wherein said granularmagnetic thin layer is deposited on said principal surface by sputteringprocess.
 4. A display device as claimed in claim 2, wherein saidgranular magnetic thin layer is deposited on said principal surface byvapor deposition process.
 5. A light emitting element having a lightemitting window with a principal surface, said light emitting elementcomprising a magnetic loss layer formed on at least a part of saidprincipal surface.
 6. A light emitting element as claimed in claim 5,wherein said magnetic loss layer is a granular magnetic thin layer witha magnetic composition comprising M, X and Y, where M is a metallicmagnetic material consisting of Fe, Co, and/or Ni, X being element orelements other than M and Y, and Y being F, N, and/or O.
 7. A lightemitting element as claimed in claim 6, wherein said granular magneticthin layer is deposited on said principal surface by sputtering process.8. A light emitting element as claimed in claim 6, wherein said granularmagnetic thin layer is deposited on said principal surface by vapordeposition process.
 9. A light emitting element having a light emittingwindow with a principal surface, said light emitting element comprisinga meshed magnetic loss layer formed on at least a part of said principalsurface.
 10. A light emitting element as claimed in claim 9, whereinsaid meshed magnetic loss layer is a granular magnetic thin layer with amagnetic composition comprising M, X and Y, where M is a metallicmagnetic material consisting of Fe, Co, and/or Ni, X being element orelements other than M and Y, and Y being F, N, and/or O.
 11. A lightemitting element as claimed in claim 10, wherein said granular magneticthin layer is deposited on said principal surface by sputtering processusing a mask.
 12. A light emitting element as claimed in claim 10,wherein said granular magnetic thin layer is deposited on said principalsurface by vapor deposition process using a mask.
 13. A light emittingelement as claimed in claim 10, wherein said granular magnetic thinlayer is a crosshatched film formed by crosshatching a magnetic losswire made of a granular magnetic material.
 14. A plasma display panelhaving a front glass substrate with an outer surface, said plasmadisplay panel comprising a sheet-like magnetic loss layer formed on saidouter surface.
 15. A plasma display panel as claimed in claim 14,wherein said sheet-like magnetic loss layer is a granular magnetic thinlayer with a magnetic composition comprising M, X and Y, where M is ametallic magnetic material consisting of Fe, Co, and/or Ni, X beingelement or elements other than M and Y, and Y being F, N, and/or O. 16.A plasma display panel as claimed in claim 15, wherein said sheet-likemagnetic loss layer is deposited on said outer surface by sputteringprocess.
 17. A plasma display panel as claimed in claim 15, wherein saidsheet-like magnetic loss layer is deposited on said outer surface byvapor deposition process.
 18. A plasma display panel having a frontglass substrate with an inner surface, said plasma display panelcomprising a sheet-like magnetic loss layer formed on said innersurface.
 19. A plasma display panel as claimed in claim 18, wherein saidsheet-like magnetic loss layer is a granular magnetic thin layer with amagnetic composition comprising M, X and Y, where M is a metallicmagnetic material consisting of Fe, Co, and/or Ni, X being element orelements other than M and Y, and Y being F, N, and/or O.
 20. A plasmadisplay panel as claimed in claim 19, wherein said sheet-like magneticloss layer is deposited on said inner surface by sputtering process. 21.A plasma display panel as claimed in claim 19, wherein said sheet-likemagnetic loss layer is deposited on said inner surface by vapordeposition process.
 22. A plasma display panel having a front glasssubstrate with an outer surface, said plasma display panel comprising alatticed magnetic loss layer formed on said outer surface.
 23. A plasmadisplay panel as claimed in claim 22, wherein said latticed magneticloss layer is a granular magnetic thin layer with a magnetic compositioncomprising M, X and Y, where M is a metallic magnetic materialconsisting of Fe, Co, and/or Ni, X being element or elements other thanM and Y, and Y being F, N, and/or O.
 24. A plasma display panel asclaimed in claim 23, wherein said latticed magnetic loss layer isdeposited on said outer surface by sputtering process using a mask. ofvapor deposition process and patterning process.
 34. A plasma displaypanel having a front glass substrate with an outer surface, said plasmadisplay panel comprising a striped magnetic loss layer formed on saidouter surface.
 35. A plasma display panel as claimed in claim 34,wherein said striped magnetic loss layer is a granular magnetic thinlayer with a magnetic composition comprising M, X and Y, where M is ametallic magnetic material consisting of Fe, Co, and/or Ni, X beingelement or elements other than M and Y, and Y being F, N, and/or O. 36.A plasma display panel as claimed in claim 35, wherein said stripedmagnetic loss layer is deposited on said outer surface by sputteringprocess using a mask.
 37. A plasma display panel as claimed in claim 35,wherein said striped magnetic loss layer is deposited on said outersurface by vapor deposition process using a mask.
 38. A plasma displaypanel as claimed in claim 35, wherein said striped magnetic loss layeris deposited on said outer surface by a combination of sputteringprocess and patterning process.
 39. A plasma display panel as claimed inclaim 35, wherein said striped magnetic loss layer is deposited on saidouter surface by a combination of vapor deposition process andpatterning process.
 40. A plasma display panel having a front glasssubstrate with an inner surface, said plasma display panel comprising astriped magnetic loss layer formed on said inner surface.
 41. A plasmadisplay panel as claimed in claim 40, wherein said striped magnetic losslayer is a granular magnetic thin layer with a magnetic compositioncomprising M, X and Y, where M is a metallic magnetic materialconsisting of Fe, Co, and/or Ni, X being element or elements other thanM and Y, and Y being F, N, and/or O.
 42. A plasma display panel asclaimed in claim 41, wherein said striped magnetic loss layer isdeposited on said inner surface by sputtering process using a mask. 43.A plasma display panel as claimed in claim 41, wherein said stripedmagnetic loss layer is deposited on said inner surface by vapordeposition process using a mask.
 44. A plasma display panel as claimedin claim 41, wherein said striped magnetic loss layer is deposited onsaid inner surface by a combination of sputtering process and patterningprocess.
 45. A plasma display panel as claimed in claim 41, wherein saidstriped magnetic loss layer is deposited on said inner surface by acombination of vapor deposition process and patterning process.
 46. Aplasma display panel having a front glass substrate with an outersurface, said plasma display panel comprising a specked magnetic losslayer formed on said outer surface.
 47. A plasma display panel asclaimed in claim 46, wherein said specked magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 48. A plasma display panel as claimed in claim 47,wherein said specked magnetic loss layer is deposited on said outersurface by sputtering process using a mask.
 49. A plasma display panelas claimed in claim 47, wherein said specked magnetic loss layer isdeposited on said outer surface by vapor deposition process using amask.
 50. A plasma display panel as claimed in claim 47, wherein saidspecked magnetic loss layer is deposited on said outer surface by acombination of sputtering process and patterning process.
 51. A plasmadisplay panel as claimed in claim 47, wherein said specked magnetic losslayer is deposited on said outer surface by a combination of vapordeposition process and patterning process.
 52. A plasma display panelhaving a front glass substrate with an inner surface, said plasmadisplay panel comprising a specked magnetic loss layer formed on saidinner surface.
 53. A plasma display panel as claimed in claim 52,wherein said specked magnetic loss layer is a granular magnetic thinlayer with a magnetic composition comprising M, X and Y, where M is ametallic magnetic material consisting of Fe, Co, and/or Ni, X beingelement or elements other than M and Y, and Y being F, N, and/or O. 54.A plasma display panel as claimed in claim 53, wherein said speckedmagnetic loss layer is deposited on said inner surface by sputteringprocess using a mask.
 55. A plasma display panel as claimed in claim 53,wherein said specked magnetic loss layer is deposited on said innersurface by vapor deposition process using a mask.
 56. A plasma displaypanel as claimed in claim 53, wherein said specked magnetic loss layeris deposited on said inner surface by a combination of sputteringprocess and patterning process.
 57. A plasma display panel as claimed inclaim 53, wherein said specked magnetic loss layer is deposited on saidinner surface by a combination of vapor deposition process andpatterning process.
 58. A cathode-ray tube (CRT) display devicecomprising a cathode-ray tube having a display panel with an innersurface, said CRT display device comprising a latticed magnetic losslayer formed on said inner surface.
 59. A CRT display device as claimedin claim 58, wherein said latticed magnetic loss layer is a granularmagnetic thin layer with a magnetic composition comprising M, X and Y,where M is a metallic magnetic material consisting of Fe, Co, and/or Ni,X being element or elements other than M and Y, and Y being F, N, and/orO.
 60. A CRT display device as claimed in claim 59, wherein saidlatticed magnetic loss layer is deposited on said inner surface bysputtering process using a mask.
 61. A CRT display device as claimed inclaim 59, wherein said latticed magnetic loss layer is deposited on saidinner surface by vapor deposition process using a mask.
 62. A CRTdisplay device as claimed in claim 59, wherein said latticed magneticloss layer is deposited on said inner surface by a combination ofsputtering process and patterning process.
 63. A CRT display device asclaimed in claim 59, wherein said latticed magnetic loss layer isdeposited on said inner surface by a combination of vapor depositionprocess and patterning process.
 64. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with anouter surface, said CRT display device comprising a latticed magneticloss layer formed on said outer surface.
 65. A CRT display device asclaimed in claim 64, wherein said latticed magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 66. A CRT display device as claimed in claim 65, whereinsaid latticed magnetic loss layer is deposited on said outer surface bysputtering process using a mask.
 67. A CRT display device as claimed inclaim 65, wherein said latticed magnetic loss layer is deposited on saidouter surface by vapor deposition process using a mask.
 68. A CRTdisplay device as claimed in claim 65, wherein said latticed magneticloss layer is deposited on said outer surface by a combination ofsputtering process and patterning process.
 69. A CRT display device asclaimed in claim 65, wherein said latticed magnetic loss layer isdeposited on said outer surface by a combination of vapor depositionprocess and patterning process.
 70. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with aninner surface, said CRT display device comprising a striped magneticloss layer formed on said inner surface.
 71. A CRT display device asclaimed in claim 70, wherein said striped magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 72. A CRT display device as claimed in claim 71, whereinsaid striped magnetic loss layer is deposited on said inner surface bysputtering process using a mask.
 73. A CRT display device as claimed inclaim 71, wherein said striped magnetic loss layer is deposited on saidinner surface by vapor deposition process using a mask.
 74. A CRTdisplay device as claimed in claim 71, wherein said striped magneticloss layer is deposited on said inner surface by a combination ofsputtering process and patterning process.
 75. A CRT display device asclaimed in claim 71, wherein said striped magnetic loss layer isdeposited on said inner surface by a combination of vapor depositionprocess and patterning process.
 76. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with anouter surface, said CRT display device comprising a striped magneticloss layer formed on said outer surface.
 77. A CRT display device asclaimed in claim 76, wherein said striped magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 78. A CRT display device as claimed in claim 77, whereinsaid striped magnetic loss layer is deposited on said outer surface bysputtering process using a mask.
 79. A CRT display device as claimed inclaim 77, wherein said striped magnetic loss layer is deposited on saidouter surface by vapor deposition process using a mask.
 80. A CRTdisplay device as claimed in claim 77, wherein said striped magneticloss layer is deposited on said outer surface by a combination ofsputtering process and patterning process.
 81. A CRT display device asclaimed in claim 77, wherein said striped magnetic loss layer isdeposited on said outer surface by a combination of vapor depositionprocess and patterning process.
 82. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with aninner surface, said CRT display device comprising a specked magneticloss layer formed on said inner surface.
 83. A CRT display device asclaimed in claim 82, wherein said specked magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 84. A CRT display device as claimed in claim 83 whereinsaid specked magnetic loss layer is deposited on said inner surface bysputtering process using a mask.
 85. A CRT display device as claimed inclaim 83, wherein said specked magnetic loss layer is deposited on saidinner surface by vapor deposition process using a mask.
 86. A CRTdisplay device as claimed in claim 83, wherein said specked magneticloss layer is deposited on said inner surface by a combination ofsputtering process and patterning process.
 87. A CRT display device asclaimed in claim 83, wherein said specked magnetic loss layer isdeposited on said inner surface by a combination of vapor depositionprocess and patterning process.
 88. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with anouter surface, said CRT display device comprising a specked magneticloss layer formed on said outer surface.
 89. A CRT display device asclaimed in claim 88, wherein said specked magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 90. A CRT display device as claimed in claim 89, whereinsaid specked magnetic loss layer is deposited on said outer surface bysputtering process using a mask.
 91. A CRT display device as claimed inclaim 89, wherein said specked magnetic loss layer is deposited on saidouter surface by vapor deposition process using a mask.
 92. A CRTdisplay device as claimed in claim 89, wherein said specked magneticloss layer is deposited on said outer surface by a combination ofsputtering process and patterning process.
 93. A CRT display device asclaimed in claim 89, wherein said specked magnetic loss layer isdeposited on said outer surface by a combination of vapor depositionprocess and patterning process.
 94. A cathode-ray tube (CRT) displaydevice comprising a cathode-ray tube having a display panel with anouter surface, said CRT display device comprising a sheet-like magneticloss layer formed on said outer surface.
 95. A CRT display device asclaimed in claim 94, wherein said sheet-like magnetic loss layer is agranular magnetic thin layer with a magnetic composition comprising M, Xand Y, where M is a metallic magnetic material consisting of Fe, Co,and/or Ni, X being element or elements other than M and Y, and Y beingF, N, and/or O.
 96. A CRT display device as claimed in claim 95, whereinsaid sheet-like magnetic loss layer is deposited on said outer surfaceby sputtering process.
 97. A CRT display device as claimed in claim 95,wherein said sheet-like magnetic loss layer is deposited on said outersurface by vapor deposition process.